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  jmnic product specification silicon pnp power transistors 2SB1393 2SB1393a description ? with to-220fa package ? satisfactory linearity of h fe ? low collector to emitter saturation voltage ? complement to type 2sd1985 /1985a applications ? for power amplification pinning absolute maximum ratings(ta=25 ?? ) symbol param eter conditions va lue unit 2SB1393 -60 v cbo collector-base voltage 2SB1393a open emitter -80 v 2SB1393 -60 v ceo collector-emitter voltage 2SB1393a open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -3 a i cm collector current-peak -5 a t c =25 ?? 25 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? pin description 1 base 2 collector 3 emitter fig.1 simplified outline (to-220fa) and symbol
jmnic product specification 2 silicon pnp power transistors 2SB1393 2SB1393a characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2SB1393 -60 v (br)ceo collector-emitter breakdown voltage 2SB1393a i c =-30ma , i b =0 -80 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.375a -1.2 v v be base-emitter voltage v ce =-4v; i c =-3a -1.8 v 2SB1393 v ce =-60v ;v be =0 i ces collector cut-off current 2SB1393a v ce =-80v; v be =0 -200 | a 2SB1393 v ce =-30v; i b =0 i ceo collector cut-off current 2SB1393a v ce =-60v; i b =0 -300 | a i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-1a ; v ce =-4v 70 250 h fe-2 dc current gain i c =-3a ; v ce =-4v 10 f t transition frequency i c =-0.1a; v ce =-5v;f=1mhz 20 mhz switching times t on turn-on time 0.5 | s t s storage time 1.2 | s t f fall time i c =-1a ;i b1 =-0.1a i b2 =0.1a;v cc =-50v 0.3 | s ? h fe-1 classifications q p 70-150 120-250
jmnic product specification 3 silicon pnp power transistors 2SB1393 2SB1393a package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)
jmnic product specification 4 silicon pnp power transistors 2SB1393 2SB1393a


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